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IRFI510G - N-Channel MOSFET

Datasheet Summary

Features

  • Low drain-source on-resistance: RDS(ON) =0.54Ω (MAX).
  • Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – IRFI510G

Datasheet Details

Part number IRFI510G
Manufacturer INCHANGE
File Size 269.46 KB
Description N-Channel MOSFET
Datasheet download datasheet IRFI510G Datasheet
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Full PDF Text Transcription

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iscN-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.54Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 4.5 A IDM Drain Current-Single Pulsed 18 A PD Total Dissipation @TC=25℃ 27 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 5.5 UNIT ℃/W IRFI510G isc website：www.iscsemi.
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