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Vishay Intertechnology Electronic Components Datasheet

IRFI624G Datasheet

Power MOSFET

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Power MOSFET
IRFI624G, SiHFI624G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
250
VGS = 10 V
14
2.7
7.8
Single
1.1
TO-220 FULLPAK
D
G
GDS
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;
Available
f = 60 Hz)
RoHS*
• Sink to Lead Creepage Distance = 4.8 mm
COMPLIANT
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
TO-220 FULLPAK
IRFI624GPbF
SiHFI624G-E3
IRFI624G
SiHFI624G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 13 mH, RG = 25 Ω, IAS = 3.4 A (see fig. 12).
c. ISD 4.4 A, dI/dt 90 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
250
± 20
3.4
2.2
14
0.24
100
3.4
3.0
30
4.8
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91147
S09-0045-Rev. A, 19-Jan-09
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

IRFI624G Datasheet

Power MOSFET

No Preview Available !

IRFI624G, SiHFI624G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
4.1
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.0 Ab
VDS = 50 V, ID = 2.0 Ab
250 -
-V
- 0.36 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
µA
- - 250
- - 1.1 Ω
1.5 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Ciss
Coss
Crss
C
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
f = 1.0 MHz
- 260 -
- 77 -
pF
- 15 -
- 12 -
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 10 V
ID = 4.4 A, VDS = 200 V,
see fig. 6 and 13b
VDD = 125 V, ID = 4.4 A,
RG = 18 Ω, RD = 28 Ω,
see fig. 10b
-
-
-
-
-
-
-
- 14
- 2.7 nC
- 7.8
7.0 -
13 -
ns
20 -
12 -
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
- 4.5 -
nH
- 7.5 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - 3.4
A
- - 14
Body Diode Voltage
VSD
TJ = 25 °C, IS = 2.1 A, VGS = 0 Vb
- - 1.8 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
- 200 400 ns
TJ = 25 °C, IF = 4.4 A, dI/dt = 100 A/µsb
Qrr
-
0.95 1.9
µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91147
S09-0045-Rev. A, 19-Jan-09


Part Number IRFI624G
Description Power MOSFET
Maker Vishay
Total Page 8 Pages
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