IRFI624G
IRFI624G is Power MOSFET manufactured by Vishay.
FEATURES
- Isolated Package
- High Voltage Isolation = 2.5 k VRMS (t = 60 s;
Available f = 60 Hz)
Ro HS-
- Sink to Lead Creepage Distance = 4.8 mm
PLIANT
- Dynamic d V/dt Rating
- Low Thermal Resistance
- Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The moulding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK IRFI624GPb F Si HFI624G-E3 IRFI624G Si HFI624G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
VDS VGS
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
ID IDM
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya
Maximum Power Dissipation Peak Diode Recovery d V/dtc
TC = 25 °C
EAS IAR EAR PD d V/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Remendations (Peak Temperature) for 10 s
Mounting Torque
6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 13 m H, RG = 25 Ω, IAS = 3.4 A (see fig. 12). c. ISD ≤ 4.4 A, d I/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case.
LIMIT 250 ± 20 3.4 2.2 14 0.24 100 3.4 3.0 30 4.8
- 55 to + 150 300d 10 1.1
UNIT
W/°C m J A m J W V/ns °C lbf
- in N-...
