Datasheet Summary
Power MOSFET
IRFI620G, SiHFI620G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
14 3.0 7.9 Single
TO-220 FULLPAK
S N-Channel MOSFET
Features
- Isolated Package
- High Voltage Isolation = 2.5 kVRMS (t = 60 s;
Available f = 60 Hz)
RoHS-
- Sink to Lead Creepage Distance = 4.8 mm
PLIANT
- Dynamic dV/dt Rating
- Low Thermal Resistance
- Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for...
