Datasheet4U Logo Datasheet4U.com

IRFI624G - Power MOSFET

Datasheet Summary

Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS.
  • Sink to Lead Creepage Distance = 4.8 mm.

📥 Download Datasheet

Datasheet preview – IRFI624G

Datasheet Details

Part number IRFI624G
Manufacturer Vishay
File Size 647.83 KB
Description Power MOSFET
Datasheet download datasheet IRFI624G Datasheet
Additional preview pages of the IRFI624G datasheet.

📁 Similar Datasheet

  • IRFI624G - Power MOSFET (International Rectifier)
  • IRFI624GPBF - Power MOSFET (International Rectifier)
  • IRFI624A - Power MOSFET (Fairchild Semiconductor)
  • IRFI624B - 250V N-Channel MOSFET (Fairchild Semiconductor)
  • IRFI624B - N-Channel MOSFET (Fairchild Semiconductor)
  • IRFI620A - Power MOSFET (Fairchild Semiconductor)
  • IRFI620B - 200V N-Channel MOSFET (Fairchild Semiconductor)
  • IRFI620B - N-Channel MOSFET (Fairchild Semiconductor)
  • IRFI620G - Power MOSFET (International Rectifier)
  • IRFI610A - Power MOSFET (Samsung)
Other Datasheets by Vishay

Full PDF Text Transcription

Click to expand full text
Power MOSFET IRFI624G, SiHFI624G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 14 2.7 7.8 Single 1.1 TO-220 FULLPAK D G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS* • Sink to Lead Creepage Distance = 4.8 mm COMPLIANT • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Published: |