datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

IRL520L Datasheet

Power MOSFET

No Preview Available !

IRL520L pdf
Power MOSFET
IRL520L, SiHL520L
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
100
VGS = 5 V
12
3.0
7.1
Single
I2PAK (TO-262)
D
0.27
DS
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
• RDS (on) Specified at VGS = 4 V and 5 V
• 175°C Operating Temperature
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The I2PAK (TO-262) is a through hole power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package.
I2PAK (TO-262)
SiHL520L-GE3
IRL520LPbF
SiHL520L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 5 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 3.0 mH, RG = 25 , IAS = 9.2 A (see fig. 12).
c. ISD 9.2 A, dI/dt 110 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
LIMIT
100
± 10
9.2
6.5
36
0.40
0.025
170
9.2
6.0
60
5.5
- 55 to + 175
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91467
S11-1060-Rev. A, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

IRL520L Datasheet

Power MOSFET

No Preview Available !

IRL520L pdf
IRL520L, SiHL520L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
62
2.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 10 V
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 150 °C
VGS = 5 V
ID = 5.5 Ab
VGS = 4 V
ID = 4.6 Ab
VDS = 50 V, ID = 5.5 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Dynamic
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 5 V
ID = 9.2 A, VDS = 80 V,
see fig. 6 and 13b
VDD = 50 V, ID = 9.2 A,
RG = 9 , RD = 5.2 , see fig. 10b
MIN. TYP. MAX. UNIT
100 -
-V
- 0.12 - V/°C
1.0 - 2.0 V
- - ± 100 nA
- - 25
μA
- - 250
- - 0.27
- - 0.38
3.2 -
-S
- 490 -
- 150 - pF
- 30 -
- - 12
- - 3.0 nC
- - 7.1
- 9.8 -
- 64 -
ns
- 21 -
- 27 -
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
LD
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
- 4.5 -
nH
- 7.5 -
Continuous Source-Drain Diode Current IS MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - 9.2
A
- - 36
Body Diode Voltage
VSD
TJ = 25 °C, IS = 9.2 A, VGS = 0 Vb
- - 2.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb
-
-
130 190
0.83 1.0
ns
μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91467
S11-1060-Rev. A, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number IRL520L
Description Power MOSFET
Maker Vishay
Total Page 8 Pages
PDF Download
IRL520L pdf
IRL520L Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 IRL520 Power MOSFET Vishay
Vishay
IRL520 pdf
2 IRL520 Power MOSFET International Rectifier
International Rectifier
IRL520 pdf
3 IRL520A Advenced Power MOSFET Fairchild
Fairchild
IRL520A pdf
4 IRL520L Power MOSFET Vishay
Vishay
IRL520L pdf
5 IRL520N HEXFET Power MOSFET IRF
IRF
IRL520N pdf
6 IRL520NL (IRL520NS/L) HEXFET Power MOSFET International Rectifier
International Rectifier
IRL520NL pdf
7 IRL520NLPbF Power MOSFET International Rectifier
International Rectifier
IRL520NLPbF pdf
8 IRL520NPBF Power MOSFET International Rectifier
International Rectifier
IRL520NPBF pdf
9 IRL520NS (IRL520NS/L) HEXFET Power MOSFET International Rectifier
International Rectifier
IRL520NS pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy