IRLD120 Key Features
- Dynamic dV/dt rating
- Repetitive avalanche rated
- For automatic insertion
- End stackable
- Logic-level gate drive
- RDS(on) specified at VGS = 4 V and 5 V
- 175 °C operating temperature
- Material categorization: for definitions of pliance
- Part: IRLD120
- Manufacturer: Vishay (official site)
- Size: 807.79 KB
Other IRLD120 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
International Rectifier |
IRLD120 | POWER MOSFET |
|
International Rectifier |
IRLD120PBF | HEXFET Power MOSFET |
IRLD120 Description
Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1.