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IRLD120 Datasheet Power MOSFET

Manufacturer: Vishay

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Datasheet Details

Part number IRLD120
Manufacturer Vishay
File Size 807.79 KB
Description Power MOSFET
Datasheet download datasheet IRLD120 Datasheet

General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers.

The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

Overview

www.vishay.com IRLD120 Vishay Siliconix Power MOSFET D HVMDIP S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) VGS = 5.0 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.

Key Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche rated.
  • For automatic insertion.
  • End stackable.
  • Logic-level gate drive.
  • RDS(on) specified at VGS = 4 V and 5 V.
  • 175 °C operating temperature.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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