IRLI530G
Description
Third generation power MOSFETs from Vishay provides the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Key Features
- Isolated package
- High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
- Sink to lead creepage distance = 4.8 mm
- Logic-level gate drive
- RDS(on) specified at VGS = 4 V and 5 V
- Fast switching
- Ease of paralleling
- Material categorization: for definitions of pliance please see .vishay./doc?99912
