Datasheet Details
| Part number | IRLI530NPbF |
|---|---|
| Manufacturer | Infineon |
| File Size | 498.84 KB |
| Description | Power MOSFET |
| Datasheet | IRLI530NPbF-Infineon.pdf |
|
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Overview: Logic –Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free IRLI530NPbF HEXFET® Power MOSFET VDSS RDS(on) ID 100V 0.
| Part number | IRLI530NPbF |
|---|---|
| Manufacturer | Infineon |
| File Size | 498.84 KB |
| Description | Power MOSFET |
| Datasheet | IRLI530NPbF-Infineon.pdf |
|
|
|
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
Compare IRLI530NPbF distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRLI530NPBF | HEXFET Power MOSFET | International Rectifier |
|
IRLI530N | HEXFET Power MOSFET | International Rectifier |
 |
IRLI530A | HEXFET Power MOSFET | Fairchild Semiconductor |
|
IRLI530G | Power MOSFET | International Rectifier |
 |
IRLI530G | Power MOSFET | Vishay |
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