IRLI530N Overview
l l IRLI530N HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.10Ω G ID = 12A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable...
IRLI530N Key Features
- Isolated Package
- High Voltage Isolation = 2.5KVRMS
- Sink to Lead Creepage Dist. = 4.8mm
