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Vishay Intertechnology Electronic Components Datasheet

IRLIZ34G Datasheet

Power MOSFET

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Power MOSFET
IRLIZ34G, SiHLIZ34G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
60
VGS = 5.0 V
35
7.1
25
Single
0.050
TO-220 FULLPAK
D
G
GDS
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available
f = 60 Hz)
RoHS*
• Sink to Lead Creepage Distance 4.8 mm
COMPLIANT
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• Fast Switching
• Ease of paralleling
• Lead (Pb)-free
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
TO-220 FULLPAK
IRLIZ34GPbF
SiHLIZ34G-E3
IRLIZ34G
SiHLIZ34G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VDS
VGS
VGS at 5.0 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 583 µH, RG = 25 Ω, IAS = 20 A (see fig. 12c).
c. ISD 30 A, dI/dt 200 A/µs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91317
S09-0037-Rev. A, 19-Jan-09
LIMIT
60
± 10
20
14
80
0.28
200
42
4.5
- 55 to + 175
300d
10
1.1
UNIT
V
A
W/°C
mJ
W
V/ns
°C
lbf · in
N·m
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

IRLIZ34G Datasheet

Power MOSFET

No Preview Available !

IRLIZ34G, SiHLIZ34G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
3.6
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 10 V
VDS = 60 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 150 °C
VGS = 5.0 V
ID = 12 Ab
VGS = 4.0 V
ID = 10 Ab
VDS = 25 V, ID = 12 Ab
60
-
-
V
-
0.070
-
V/°C
1.0
-
2.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.050
Ω
-
-
0.070
12
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Ciss
Coss
Crss
C
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
f = 1 MHz
-
1600
-
-
660
-
pF
-
170
-
-
12
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
-
VGS = 5.0 V
ID = 30 A, VDS = 48 V,
see fig. 6 and 13b
-
-
-
35
-
7.1
nC
-
25
VDD = 30 V, ID = 30 A,
RG = 6.0 Ω, RD= 1.0 Ω,
see fig. 10b
-
14
-
-
170
-
ns
-
30
-
-
56
-
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
-
4.5
-
nH
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
20
A
-
-
80
Body Diode Voltage
VSD
TJ = 25 °C, IS = 20 A, VGS = 0 Vb
-
-
1.6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = 30 A, dI/dt = 100 A/µsb
90
180
ns
Qrr
-
0.65 1.3
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91317
S09-0037-Rev. A, 19-Jan-09


Part Number IRLIZ34G
Description Power MOSFET
Maker Vishay
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IRLIZ34G Datasheet PDF






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