Qg (Max.) (nC)
VGS = 5.0 V
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available
f = 60 Hz)
• Sink to Lead Creepage Distance 4.8 mm
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• Fast Switching
• Ease of paralleling
• Lead (Pb)-free
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 5.0 V
TC = 25 °C
TC = 100 °C
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
6-32 or M3 screw
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 583 µH, RG = 25 Ω, IAS = 20 A (see fig. 12c).
c. ISD ≤ 30 A, dI/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91317
S09-0037-Rev. A, 19-Jan-09
- 55 to + 175
lbf · in