IRLZ34 Key Features
- Dynamic dV/dt Rating
- Logic-Level Gate Drive
- RDS(on) Specified at VGS = 4 V and 5 V
- 175 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- pliant to RoHS Directive 2002/95/EC
- Part: IRLZ34
- Manufacturer: Vishay (official site)
- Size: 1.18 MB
Other IRLZ34 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
International Rectifier |
IRLZ34 | HEXFET POWER MOSFET |
|
International Rectifier |
IRLZ34L | HEXFET Power MOSFET |
|
International Rectifier |
IRLZ34N | N-channel Power MOSFET |
NXP Semiconductors |
IRLZ34N | N-Channel MOSFET |
Inchange Semiconductor |
IRLZ34N | N-Channel MOSFET |
IRLZ34 Description
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W. The low and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.