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Vishay Intertechnology Electronic Components Datasheet

MBR20100CT-E3 Datasheet

Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier

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MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3
www.vishay.com
Vishay General Semiconductor
Dual Common-Cathode High Voltage
Trench MOS Barrier Schottky Rectifier
TO-220AB
TMBS®
ITO-220AB
MBR2090CT
MBR20100CT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
MBRF2090CT
MBRF20100CT
PIN 1
PIN 2
PIN 3
TO-263AB
K
123
2
1
MBRB2090CT
MBRB20100CT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
Package
2 x 10 A
90 V to 100 V
150 A
0.65 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB
Diode variation
Common cathode
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
total device
Maximum average forward rectified current at TC = 133 °C per diode
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
SYMBOL
VRRM
VRWM
VDC
IF(AV)
IFSM
EAS
IRRM
dV/dt
VAC
TJ, TSTG
MBR2090CT MBR20100CT
90 100
90 100
90 100
20
10
150
130
0.5
10 000
1500
-65 to +150
UNIT
V
V
V
A
A
mJ
A
V/μs
V
°C
Revision: 11-Sep-13
1 Document Number: 89033
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

MBR20100CT-E3 Datasheet

Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum instantaneous forward voltage
per diode
Maximum reverse current per diode at working
peak reverse voltage
IF = 10 A
IF = 10 A
IF = 20 A
TC = 25 °C
TC = 125 °C
TC = 125 °C
TJ = 25 °C
TJ = 125 °C
VF (1)
IR (2)
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
0.80
0.65
0.75
100
6.0
UNIT
V
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
Typical thermal resistance per diode
RJA
RJC
60
2.0
-
3.5
MBRB
60
2.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
MBR20100CT-E3/4W
1.88
ITO-220AB
MBRF20100CT-E3/4W
1.75
TO-263AB
MBRB20100CT-E3/4W
1.38
TO-263AB
MBRB20100CT-E3/8W
1.38
PACKAGE CODE
4W
4W
4W
8W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
20
Resistive or Inductive Load
MBR &
MBRB
MBRF
16
12
8
4
0
0 50 100
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
150
160
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
140
120
100
80
60
40
1
10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward SurgeCurrent
Per Diode
Revision: 11-Sep-13
2 Document Number: 89033
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number MBR20100CT-E3
Description Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay
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