VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
IF(AV)
Peak repetitive forward current per leg
IFRM
Non-repetitive peak surge current
IFSM
Peak repetitive reverse surge current
Non-repetitive avalanche energy per leg
IRRM
EAS
TEST CONDITIONS
TC = 133 °C, rated VR
Rated VR, square wave, 20 kHz, TC = 133 °C
Following any rated load
5 μs sine or 3 μs rect. pulse condition and with rated
VRRM applied
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
2.0 μs, 1.0 kHz
TJ = 25 °C, IAS = 2 A, L = 12 mH
VALUES
10
20
20
850
150
0.5
24
UNITS
A
mJ
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum instantaneous reverse current IRM (1)
Threshold voltage
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
VF(TO)
rt
CT
LS
dV/dt
10 A
20 A
10 A
20 A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
Rated DC voltage
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured from top of terminal to mounting plane
Rated VR
VALUES
0.80
0.95
0.70
0.85
0.10
6
0.433
15.8
400
8.0
10 000
UNITS
V
mA
V
m
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ
Maximum storage temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
Maximum thermal resistance,
junction to ambient
TStg
RthJC
RthCS
RthJA
DC operation
Mounting surface, smooth and greased
(Only for TO-220)
DC operation
(For D2PAK and TO-262)
Approximate weight
Mounting torque
minimum
maximum
Marking device
VALUES
- 65 to 150
- 65 to 175
2.0
UNITS
°C
0.50 °C/W
50
2g
0.07 oz.
6 (5)
12 (10)
kg· cm
(lbf · in)
MBR2080CT
MBR2090CT
MBR20100CT
Revision: 04-Dec-13
2 Document Number: 94290
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