SD211DE-2 - N-Channel Lateral DMOS FETs

Description

The SD211DE-2 series consists of enhancement- mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications.

The SD211DE-2 may be used for "5-V analog switching or as a high speed driver of the SD214DE-2.

Features

D Ultra-High Speed Switching.
tON: 1 ns D Ultra-Low Reverse Capacitance: 0.2 pF D Low Guaranteed rDS @ 5 V D Low Turn-On Threshold Voltage D N-Channel Enhancement Mode.

Vishay

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Datasheet Details

Part number	SD211DE-2
Manufacturer	Vishay
File Size	39.59 KB
Description	N-Channel Lateral DMOS FETs
Datasheet	SD211DE-2 Datasheet
Additional preview pages of the SD211DE-2 datasheet.

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Full PDF Text Transcription

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SD211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow) PRODUCT SUMMARY Part Number SD211DE-2 SD213DE-2 SD215DE-2 V(BR)DS Min (V) 30 10 20 VGS(th) Max (V) 1.5 1.5 1.5 rDS(on) Max (W) 45 @ VGS = 10 V 45 @ VGS = 10 V 45 @ VGS = 10 V Crss Max (pF) 0.5 0.5 0.5 tON Max (ns) 2 2 2 FEATURES D Ultra-High Speed Switching—tON: 1 ns D Ultra-Low Reverse Capacitance: 0.

Published: Nov 13, 2014 |