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SD213DE-2 - N-Channel Lateral DMOS FETs

Download the SD213DE-2 datasheet PDF. This datasheet also covers the SD211DE-2 variant, as both devices belong to the same n-channel lateral dmos fets family and are provided as variant models within a single manufacturer datasheet.

General Description

The SD211DE-2 series consists of enhancement- mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications.

The SD211DE-2 may be used for "5-V analog switching or as a high speed driver of the SD214DE-2.

Key Features

  • D Ultra-High Speed Switching.
  • tON: 1 ns D Ultra-Low Reverse Capacitance: 0.2 pF D Low Guaranteed rDS @ 5 V D Low Turn-On Threshold Voltage D N-Channel Enhancement Mode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SD211DE-2-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SD213DE-2
Manufacturer Vishay
File Size 39.59 KB
Description N-Channel Lateral DMOS FETs
Datasheet download datasheet SD213DE-2 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SD211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow) PRODUCT SUMMARY Part Number SD211DE-2 SD213DE-2 SD215DE-2 V(BR)DS Min (V) 30 10 20 VGS(th) Max (V) 1.5 1.5 1.5 rDS(on) Max (W) 45 @ VGS = 10 V 45 @ VGS = 10 V 45 @ VGS = 10 V Crss Max (pF) 0.5 0.5 0.5 tON Max (ns) 2 2 2 FEATURES D Ultra-High Speed Switching—tON: 1 ns D Ultra-Low Reverse Capacitance: 0.