Datasheet4U Logo Datasheet4U.com

SD211DE-2 - N-Channel Lateral DMOS FETs

General Description

The SD211DE-2 series consists of enhancement- mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications.

The SD211DE-2 may be used for "5-V analog switching or as a high speed driver of the SD214DE-2.

Key Features

  • D Ultra-High Speed Switching.
  • tON: 1 ns D Ultra-Low Reverse Capacitance: 0.2 pF D Low Guaranteed rDS @ 5 V D Low Turn-On Threshold Voltage D N-Channel Enhancement Mode.

📥 Download Datasheet

Datasheet Details

Part number SD211DE-2
Manufacturer Vishay
File Size 39.59 KB
Description N-Channel Lateral DMOS FETs
Datasheet download datasheet SD211DE-2 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SD211DE N-Channel Lateral DMOS FETs Siliconix
SD211DE MOSFET LINEAR SYSTEMS
SD211DE N-Channel Lateral DMOS FETs TEMIC
SD211 (SD211/3/5) High-Speed Analo N-Channel DMOS FETs Calogic
SD211 (SD210 - SD215) N-Channel Enhancement-Mode D-MOS FET Switches Topaz Semiconductor

Other Datasheets by Vishay

Part Number Description
SD213DE-2 N-Channel Lateral DMOS FETs
SD215DE-2 N-Channel Lateral DMOS FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SD211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow) PRODUCT SUMMARY Part Number SD211DE-2 SD213DE-2 SD215DE-2 V(BR)DS Min (V) 30 10 20 VGS(th) Max (V) 1.5 1.5 1.5 rDS(on) Max (W) 45 @ VGS = 10 V 45 @ VGS = 10 V 45 @ VGS = 10 V Crss Max (pF) 0.5 0.5 0.5 tON Max (ns) 2 2 2 FEATURES D Ultra-High Speed Switching—tON: 1 ns D Ultra-Low Reverse Capacitance: 0.