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Vishay Intertechnology Electronic Components Datasheet

SI1078X Datasheet

MOSFET

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www.vishay.com
Si1078X
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () MAX.
0.142 at VGS = 10 V
0.154 at VGS = 4 V
0.195 at VGS = 2.5 V
ID (A)
1.02
0.98
0.87
SC-89 Single (6 leads)
S
D4
D5
6
Qg (TYP.)
1.5
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg tested
• Typical ESD performance 1400 V
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load switch for portable devices
3
2G
1D
D
Top View
Marking Code: D
Ordering Information:
Si1078X-T1-GE3 (lead (Pb)-free and halogen-free)
D
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) a
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
LIMIT
30
± 12
1.02 a, b
0.82 a, b
6
0.2 a, b
0.24 a, b
0.15 a, b
-55 to +150
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient a, c
t5s
Steady State
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 650 °C/W.
SYMBOL
RthJA
TYPICAL
440
540
MAXIMUM
530
650
UNIT
°C/W
S16-1056-Rev. A, 30-May-16
1
Document Number: 68549
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SI1078X Datasheet

MOSFET

No Preview Available !

www.vishay.com
Si1078X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance
Dynamic b
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 12 V
VDS = 0 V, VGS = ± 4.5 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 85 °C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 1 A
VGS = 4.5 V, ID = 1 A
VGS = 2.5 V, ID = 0.5 A
VDS = 15 V, ID = 1 A
30 - - V
- 36.7 -
mV/°C
- -2.8 -
0.6 - 1.5 V
- - ± 20
- - ±1
μA
- -1
- - 10
6-- A
- 0.118 0.142
- 0.128 0.154
- 0.150 0.195
- 5.5 -
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 1 A
VDS = 15 V, VGS = 4.5 V, ID = 1 A
f = 1 MHz
VDD = 15 V, RL = 18.9
ID 0.8 A, VGEN = 4.5 V, Rg = 1
VDD = 15 V, RL = 18.9
ID 0.8 A, VGEN = 10 V, Rg = 1
- 110
- 21
- 11
-3
- 1.5
- 0.2
- 0.42
1.04 5.2
-8
- 25
- 23
- 23
-5
- 23
- 10
- 35
-
-
-
6
3
-
-
5.6
16
38
35
35
10
35
20
53
pF
nC
ns
Pulse Diode Forward Current a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ISM
VSD
trr
Qrr
ta
tb
IS = 0.8 A
IF = 2 A, dI/dt = 100 A/μs
- -6 A
- 0.75 1.2
V
- 12 20 ns
- 4 8 nC
-7-
ns
-5-
Notes
a. Pulse test; pulse width 100 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1056-Rev. A, 30-May-16
2
Document Number: 68549
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SI1078X
Description MOSFET
Maker Vishay
Total Page 8 Pages
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