SI1073X Datasheet | Vishay

FEATURES - Halogen-free Option Available - Trench FET® Power MOSFET - 100 % Rg and UIS Tested Ro HS PLIANT APPLICATIONS .. - Load Switch SC-89 (6-LEADS) D 1 6 D S Marking Code 1 XX YY Lot Traceability and Date Code Part # Code Top View D Ordering Information: Si1073X-T1-E3 (Lead (Pb)-free) Si1073X-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IAS EAS IS PD TJ, Tstg Limit - 30 ± 20 - 0.98b, c - 0.78b, c -8 -6 1.8 0.2b, c 0.236b, c 0.151b, c - 55 to 150 Unit V L = 0.1 m H TA = 25 °C TA = 25 °C TA = 70 °C m J A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 650 °C/W. t≤5s Steady State Symbol Rth JA Typical 440 540 Maximum 530 650 Unit °C/W Document Number: 74285 S-82617-Rev. C, 03-Nov-08 .vishay. 1 New Product Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf ISM VSD trr Qrr ta tb IF = - 0.7 A, d I/dt = 100 A/µs IS = - 0.63 A 0.8 14.3 12.16 11.1 3.2 VDD = - 15 V, RL = 22.72 Ω ID ≅ - 0.66 A, VGEN = - 4.5 V, Rg = 1 Ω VDD = - 15 V, RL = 19.2 Ω ID ≅ - 0.78 A, VGEN = - 10 V, Rg = 1 Ω f = 1 MHz VDS = - 15 V, VGS...