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N-Channel 20 V (D-S) MOSFET
Si1012CR
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.396 at VGS = 4.5 V
0.456 at VGS = 2.5 V 20
0.546 at VGS = 1.8 V
1.100 at VGS = 1.5 V
ID (mA) 600 500 350 50
Qg (Typ.) 0.75
SC-75A G1
3D
S2 Top View
Ordering Information: Si1012CR-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • TrenchFET® Power MOSFET: 1.2 V Rated • 100 % Rg Tested • Gate-Source ESD Protected: 1000 V • Material categorization:
For definitions of compliance please see www.vishay.
SI1012CR Datasheet
