SI1012CR Overview
Key Features
- TrenchFET® Power MOSFET: 1.2 V Rated
- 100 % Rg Tested
- Gate-Source ESD Protected: 1000 V
- Material categorization: For definitions of compliance please see
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| SI1012 | Micro Commercial Components | N-Channel Transistor |
| SI1012 | Silicon Labs | Ultra Low Power ADC |
| SI1011 | Silicon Labs | Ultra Low Power ADC |
| SI1010 | Silicon Labs | Ultra Low Power 10-Bit ADC |
| SI1015 | Silicon Labs | Ultra Low Power ADC |