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SI1016X - MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFETs.
  • 2000 V ESD Protection.
  • Very Small Footprint.
  • High-Side Switching.
  • Low On-Resistance: N-Channel, 0.7  P-Channel, 1.2 .
  • Low Threshold: ± 0.8 V (Typ. ).
  • Fast Switching Speed: 14 ns.
  • 1.8 V Operation.
  • Compliant to RoHS Directive 2002/95/EC SOT-563 SC-89 S1 1 6 D1 G1 2 5 G2 Marking Code: A D2 3 4 S2 Top View.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.70 at VGS = 4.5 V N-Channel 20 0.85 at VGS = 2.5 V 1.25 at VGS = 1.8 V 1.2 at VGS = - 4.5 V P-Channel - 20 1.6 at VGS = - 2.5 V 2.7 at VGS = - 1.8 V ID (mA) 600 500 350 - 400 - 300 - 150 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 2000 V ESD Protection • Very Small Footprint • High-Side Switching • Low On-Resistance: N-Channel, 0.7  P-Channel, 1.2  • Low Threshold: ± 0.8 V (Typ.) • Fast Switching Speed: 14 ns • 1.