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SI1013CX - MOSFET

Key Features

  • TrenchFET® power MOSFET.
  • 100 % Rg tested.
  • Typical ESD protection: 1000 V (HBM).
  • Fast switching speed.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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www.vishay.com Si1013CX Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.760 at VGS = -4.5 V -20 1.040 at VGS = -2.5 V 1.500 at VGS = -1.8 V ID (A) -0.45 -0.40 -0.32 Qg (TYP.) (nC) 1 SC-89 (3 leads) D 3 1 G Top View 2 S Marking Code: 6 Ordering Information: Si1013CX-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® power MOSFET • 100 % Rg tested • Typical ESD protection: 1000 V (HBM) • Fast switching speed • Material categorization: for definitions of compliance please see www.vishay.