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SI1016CX - MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFETs.
  • High-Side Switching.
  • Ease in Driving Switches.
  • Low Offset (Error) Voltage.
  • Low-Voltage Operation.
  • High-Speed Circuits.
  • Typical ESD Protection: N-Channel 1500 V P-Channel 1000 V (HBM).
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.396 at VGS = 4.5 V N-Channel 20 0.456 at VGS = 2.5 V 0.546 at VGS = 1.8 V 0.760 at VGS = 1.5 V 0.756 at VGS = - 4.5 V P-Channel - 20 1.038 at VGS = - 2.5 V 1.440 at VGS = - 1.8 V 2.4 at VGS = - 1.5 V ID (A) 0.5 0.2 0.2 0.05 - 0.35 - 0.35 - 0.1 - 0.05 1 nC 0.75 nC Qg (Typ.