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SI8489EDB - P-Channel MOSFET

Features

  • TrenchFET® power MOSFET.
  • Small 1 mm x 1 mm max. outline area.
  • Low 0.548 mm max. profile.
  • Typical ESD protection 2500 V HBM.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SI8489EDB
Manufacturer Vishay
File Size 163.50 KB
Description P-Channel MOSFET
Datasheet download datasheet SI8489EDB Datasheet

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Full PDF Text Transcription

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www.vishay.com Si8489EDB Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. 0.044 at VGS = -10 V 0.054 at VGS = -4.5 V 0.082 at VGS = -2.5 V ID (A) a, e -5.4 -4.9 -3.9 Qg (TYP.) 9.5 nC MICRO FOOT® 1 x 1 S S2 xxxxxxx 3 1 1 1 mm 4G D Backside View Bump Side View 1 mm Marking Code: xxxx = 8489 xxx = Date / lot traceability code Ordering Information: Si8489EDB-T2-E1 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® power MOSFET • Small 1 mm x 1 mm max. outline area • Low 0.548 mm max. profile • Typical ESD protection 2500 V HBM • Material categorization: for definitions of compliance please see www.vishay.
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