SI8481DB - P-Channel MOSFET

Vishay

Key Features

TrenchFET® Gen III p-channel power MOSFET.
Low 0.6 mm maximum height.
Low on-resistance.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

SI8481DB p-channel mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SI8481DB
Manufacturer	Vishay
File Size	155.29 KB
Description	P-Channel MOSFET
Datasheet	SI8481DB Datasheet

Full PDF Text Transcription for SI8481DB (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SI8481DB. For precise diagrams, and layout, please refer to the original PDF.

www.vishay.com Si8481DB Vishay Siliconix P-Channel 20 V (D-S) MOSFET MICRO FOOT® 1.6 x 1.6 D D2 xxxxxxx 3 1 1 1.6 mm 4G S Backside View Bump Side View 1.6 mm PRODUCT SUMM...

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xxx 3 1 1 1.6 mm 4G S Backside View Bump Side View 1.6 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ. (nC) ID (A) Configuration -20 0.021 0.025 0.039 31.2 -9.7 a Single FEATURES • TrenchFET® Gen III p-channel power MOSFET • Low 0.6 mm maximum height • Low on-resistance • Material categorization: for definitions of compliance please see www.vishay.

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