SI8481DB Key Features
- TrenchFET® Gen III p-channel power MOSFET
- Low 0.6 mm maximum height
- Low on-resistance
- Material categorization: for definitions of pliance please see .vishay./doc?99912
- Part: SI8481DB
- Description: P-Channel MOSFET
- Manufacturer: Vishay
- Size: 155.29 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| SI8487DB | P-Channel MOSFET |
| SI8489EDB | P-Channel MOSFET |
| Si8404DB | N-channel MOSFET |
| Si8406DB | N-Channel MOSFET |
| Si8407DB | P-Channel MOSFET |