SI8481DB Overview
() at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ.
SI8481DB Key Features
- TrenchFET® Gen III p-channel power MOSFET
- Low 0.6 mm maximum height
- Low on-resistance
- Material categorization: for definitions of pliance please see .vishay./doc?99912