Datasheet4U Logo Datasheet4U.com

SI8489EDB - P-Channel MOSFET

Features

  • TrenchFET® power MOSFET.
  • Small 1 mm x 1 mm max. outline area.
  • Low 0.548 mm max. profile.
  • Typical ESD protection 2500 V HBM.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet preview – SI8489EDB

Datasheet Details

Part number SI8489EDB
Manufacturer Vishay
File Size 163.50 KB
Description P-Channel MOSFET
Datasheet download datasheet SI8489EDB Datasheet
Additional preview pages of the SI8489EDB datasheet.
Other Datasheets by Vishay

Full PDF Text Transcription

Click to expand full text
www.vishay.com Si8489EDB Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. 0.044 at VGS = -10 V 0.054 at VGS = -4.5 V 0.082 at VGS = -2.5 V ID (A) a, e -5.4 -4.9 -3.9 Qg (TYP.) 9.5 nC MICRO FOOT® 1 x 1 S S2 xxxxxxx 3 1 1 1 mm 4G D Backside View Bump Side View 1 mm Marking Code: xxxx = 8489 xxx = Date / lot traceability code Ordering Information: Si8489EDB-T2-E1 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® power MOSFET • Small 1 mm x 1 mm max. outline area • Low 0.548 mm max. profile • Typical ESD protection 2500 V HBM • Material categorization: for definitions of compliance please see www.vishay.
Published: |