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Si8489EDB
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) -20
RDS(on) (Ω) MAX. 0.044 at VGS = -10 V 0.054 at VGS = -4.5 V 0.082 at VGS = -2.5 V
ID (A) a, e -5.4 -4.9 -3.9
Qg (TYP.) 9.5 nC
MICRO FOOT® 1 x 1
S
S2
xxxxxxx
3 1
1
1 mm
4G D
Backside View
Bump Side View
1 mm
Marking Code: xxxx = 8489 xxx = Date / lot traceability code
Ordering Information: Si8489EDB-T2-E1 (lead (Pb)-free and halogen-free)
FEATURES • TrenchFET® power MOSFET • Small 1 mm x 1 mm max. outline area • Low 0.548 mm max. profile • Typical ESD protection 2500 V HBM • Material categorization: for definitions of
compliance please see www.vishay.