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SIA918EDJ Key Features

  • TrenchFET® power MOSFET
  • Thermally enhanced PowerPAK® SC-70 package
  • Small footprint area
  • Low on-resistance
  • Typical ESD protection: 1000 V (HBM)
  • 100 % Rg tested
  • Material categorization: for definitions of pliance please see .vishay./doc?99912

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SIA918EDJ Description

SiA918EDJ Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. CL Ordering Information: SiA918EDJ-T1-GE3 (lead (Pb)-free and halogen free).