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Vishay Intertechnology Electronic Components Datasheet

SIA950DJ Datasheet

Dual N-Channel MOSFET

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New Product
SiA950DJ
Vishay Siliconix
Dual N-Channel 190-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
190
RDS(on) (Ω)
3.8 at VGS = 4.5 V
4.2 at VGS = 2.5 V
17 at VGS = 1.8 V
ID (A)a
0.95
0.9
0.3
Qg (Typ.)
1.4 nC
PowerPAK SC-70-6 Dual
FEATURES
Halogen-free According to IEC 61249-2-21
• LITTLE FOOT® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm profile
APPLICATIONS
• DC/DC Converter for Portable Devices
Load Switch for Portable Devices
1
S1
D1
D1
6
G2
5
2.05 mm
S2
4
2
G1
D2
3
D2
2.05 mm
Marking Code
Part # code
CEX
XXX
Lot Traceability
and Date code
D1 D2
G1 G2
S1 S2
Ordering Information: SiA950DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
190
± 16
0.95
0.76
0.47b, c
0.38b, c
1
0.95
0.47b, c
7
5
1.9b, c
1.2b, c
- 55 to 150
260
Unit
V
A
W
°C
Document Number: 64712
S09-0142-Rev. A, 02-Feb-09
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SIA950DJ Datasheet

Dual N-Channel MOSFET

No Preview Available !

SiA950DJ
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
Symbol
RthJA
RthJC
Typical
52
12.5
Maximum
65
16
Unit
°C/W
Notes:
a. TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
Ciss
Coss
Crss
Qg
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 16 V
VDS = 190 V, VGS = 0 V
VDS = 190 V, VGS = 0 V, TJ = 85 °C
VDS 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 0.36 A
VGS = 2.5 V, ID = 0.35 A
VGS = 1.8 V, ID = 0.15 A
VDS = 15 V, ID = 0.36 A
VDS = 100 V, VGS = 0 V, f = 1 MHz
VDS = 95 V, VGS = 10 V, ID = 0.47 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
IS
ISM
VSD
VDS = 95 V, VGS = 4.5 V, ID = 0.47 A
f = 1 MHz
VDD = 95 V, RL = 250 Ω
ID 0.38 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 95 V, RL = 250 Ω
ID 0.38 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 0.5 A, VGS = 0 V
Min.
190
0.6
1
Typ.
200
- 3.0
3.0
3.2
3.5
2
90
5
3
3
1.4
0.25
0.40
2.3
10
15
25
15
3
12
10
10
0.8
Max.
Unit
1.4
± 100
1
10
3.8
4.2
17.0
V
mV/°C
V
nA
µA
A
Ω
S
pF
4.5
2.1
nC
15
25
40
25
10
20
15
15
0.95
1
1.2
Ω
ns
A
V
www.vishay.com
2
Document Number: 64712
S09-0142-Rev. A, 02-Feb-09


Part Number SIA950DJ
Description Dual N-Channel MOSFET
Maker Vishay
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