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Vishay Intertechnology Electronic Components Datasheet

SIB437EDKT Datasheet

P-Channel MOSFET

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New Product
P-Channel 8 V (D-S) MOSFET
SiB437EDKT
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
-8
RDS(on) ()
0.034 at VGS = - 4.5 V
0.063 at VGS = - 1.8 V
0.084 at VGS = - 1.5 V
0.180 at VGS = - 1.2 V
ID (A)
- 9a
-5
-3
-1
Qg (Typ.)
10.5 nC
Thin PowerPAK SC-75-6L-Single
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-75 Package with ultra-thin 0.6 mm height
- Small Footprint Area
- Low On-Resistance
• 100 % Rg Tested
• Typical ESD Performance 2000 V
• Built in ESD Protection with Zener Diode
• Compliant to RoHS Directive 2002/95/EC
6D
5D
1.60 mm
4S
APPLICATIONS
S
• Load Switch for Portable Devices
1
D
• Load Switch for Low Voltage Gate Drive
2
D
3
G
S
1.60 mm
0.60 mm
Marking Code
Part # code
BMX
XXX
Lot Traceability
and Date code
Ordering Information: SiB437EDKT-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
R
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
http://www.DataSheet4U.net/
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
-8
±5
- 9a
- 9a
- 7.5b, c
- 6b, c
- 25
- 9a
- 2b, c
13
8.4
2.4b, c
1.6b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
41
7.5
51
°C/W
9.5
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The Thin PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
Document Number: 67402
S11-0235-Rev. A, 14-Feb-11
www.vishay.com
1
datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SIB437EDKT Datasheet

P-Channel MOSFET

No Preview Available !

SiB437EDKT
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 5 V
VDS = - 8 V, VGS = 0 V
VDS = - 8 V, VGS = 0 V, TJ = 55 °C
VDS - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 3 A
VGS = - 1.8 V, ID = - 1 A
VGS = - 1.5 V, ID = - 0.5 A
VGS = - 1.2 V, ID = - 0.5 A
VDS = - 4 V, ID = - 3 A
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
VDS = - 4 V, VGS = - 4.5 V, ID = - 7.4 A
f = 1 MHz
VDD = - 4 V, RL = 0.7 http://www.DataSheet4U.net/
ID - 6 A, VGEN = - 4.5 V, Rg = 1
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 6 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 6 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
-8
- 0.35
- 15
80
Typ.
-2
2.2
0.028
0.050
0.060
0.100
14
10.5
1.5
3.3
400
90
170
690
630
- 0.8
30
12
12
18
Max.
Unit
- 0.7
±5
-1
- 10
0.034
0.063
0.084
0.180
V
mV/°C
V
µA
A
S
16 nC
800
180
340
1380
1260
-9
- 25
- 1.2
60
25
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 67402
S11-0235-Rev. A, 14-Feb-11
datasheet pdf - http://www.DataSheet4U.net/


Part Number SIB437EDKT
Description P-Channel MOSFET
Maker Vishay
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