900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

SIB457EDK Datasheet

P-Channel MOSFET

No Preview Available !

New Product
P-Channel 20-V (D-S) MOSFET
SiB457EDK
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.035 at VGS = - 4.5 V
0.049 at VGS = - 2.5 V
- 20
0.072 at VGS = - 1.8 V
0.130 at VGS = - 1.5 V
ID (A)
- 9a
- 9a
- 9a
-2
Qg (Typ.)
13 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
- Low On-Resistance
PowerPAK SC-75-6L-Single
• 100 % Rg Tested
• Typical ESD Performance: 2500 V
• Built in ESD Protection with Zener Diode
• Compliant to RoHS Directive 2002/95/EC
S
D
6
D
5
1.60 mm S
4
1
D
2
D
3
G
S
1.60 mm
APPLICATIONS
• Load Switch for Portable Devices
• Load Switch for Charging Circuits
Marking Code
Part # code
BJX
XXX
Lot Traceability
and Date code
G
R
D
Ordering Information: SiB457EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
http://www.DataSheet4U.net/
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
- 20
±8
- 9a
- 9a
- 6.8b, c
- 5.5b, c
- 25
- 9a
- 2b, c
13
8.4
2.4b, c
1.6b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
41
7.5
51
°C/W
9.5
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 64816
S09-1497-Rev. B, 10-Aug-09
www.vishay.com
1
datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SIB457EDK Datasheet

P-Channel MOSFET

No Preview Available !

SiB457EDK
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
VDS = 0 V, VGS = ± 4.5 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 4.8 A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 2.5 V, ID = - 4.0 A
VGS = - 1.8 V, ID = - 3.3 A
VGS = - 1.5 V, ID = - 1.5 A
Forward Transconductancea
gfs VDS = - 10 V, ID = - 4.8 A
Dynamicb
Total Gate Charge
Qg VDS = - 10 V, VGS = - 8 V, ID = - 6.8 A
Gate-Source Charge
Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 6.8 A
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rg
td(on)
f = 1 MHz
http://www.DataSheet4U.net/
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 10 V, RL = 1.8 Ω
ID - 5.5 A, VGEN = - 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 10 V, RL = 1.8 Ω
ID - 5.5 A, VGEN = - 8 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 5.5 A, VGS = 0 V
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 20
- 0.4
- 15
0.28
Typ.
Max.
Unit
- 12
2.5
0.029
0.040
0.060
0.085
16
-1
±5
± 0.5
-1
- 10
0.035
0.049
0.072
0.130
V
mV/°C
V
µA
A
Ω
S
22 44
13 26
1.2
3
1.4 2.8
0.34 0.51
0.90 1.35
3.00 4.50
1.90 2.90
0.17 0.26
0.45 0.70
5.5 8.30
2.00 3.50
- 0.85
-9
- 25
- 1.2
nC
kΩ
us
A
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 64816
S09-1497-Rev. B, 10-Aug-09
datasheet pdf - http://www.DataSheet4U.net/


Part Number SIB457EDK
Description P-Channel MOSFET
Maker Vishay
PDF Download

SIB457EDK Datasheet PDF





Similar Datasheet

1 SIB457EDK P-Channel MOSFET
Vishay





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy