SiB912DK
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 1.8 A
Drain-Source On-State Resistancea
RDS(on)
VGS = 2.5 V, ID = 1.6 A
VGS = 1.8 V, ID = 0.3 A
Forward Transconductancea
gfs VDS = 10 V, ID = 1.8 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 10 V, VGS = 8 V, ID = 1.8 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 10 V, VGS = 4.5 V, ID = 1.8 A
http://www.DataSheet4U.net/
f = 1 MHz
VDD = 10 V, RL = 7.1 Ω
ID ≅ 1.4 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 10 V, RL = 7.1 Ω
ID ≅ 1.4 A, VGEN = 8 V, Rg = 1 Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = 1.4 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 1.4 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited.
Min.
20
0.4
5
0.5
Typ.
Max.
Unit
22
-2
0.180
0.223
0.300
3
1.0
± 100
1
10
0.216
0.268
0.375
V
mV/°C
V
nA
µA
A
Ω
S
95
24
11
2.0
1.2
0.3
0.15
2.5
5
10
24
8
2
9
8
7
3.0
1.8
5.0
10
20
36
16
4
18
16
14
pF
nC
Ω
ns
1.5c
A
5
0.7 1.2
V
9 18 ns
3 6 nC
6
ns
3
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 68883
S-82022-Rev. A, 01-Sep-08
datasheet pdf - http://www.DataSheet4U.net/
