SIHB22N60AE Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Part: SIHB22N60AE
- Manufacturer: Vishay (official site)
- Size: 137.60 KB
Other SIHB22N60AE Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Vishay |
SiHB22N60E | E Series Power MOSFET |
Inchange Semiconductor |
SiHB22N60E | N-Channel MOSFET |
SIHB22N60AE Description
SiHB22N60AE Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 96 12 25 Single 0.156 D2PAK (TO-263) GD S D G S N-Channel MOSFET.