SiHB22N60E Overview
SiHB22N60E Vishay Siliconix E Series Power MOSFET D2PAK (TO-263) D GD S G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 86 11 24 Single 0.18.
SiHB22N60E Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance
