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SiHB22N65E - Power MOSFET

Key Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription (Reference)

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www.vishay.com SiHB22N65E Vishay Siliconix E Series Power MOSFET D D2PAK (TO-263) GD S PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V Qg typ. (nC) ID (A) Configuration G S N-Channel MOSFET 700 0.18 32 22 Single FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.