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Vishay Intertechnology Electronic Components Datasheet

SIHF30N60E Datasheet

MOSFET

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www.vishay.com
SiHF30N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. at 25 °C ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
130
15
39
Single
0.125
TO-220 FULLPAK
D
G
GDS
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
FEATURES
• Low Figure-of-Merit (FOM) Ron x Qg
• Low Input Capacitance (Ciss)
• Reduced Switching and Conduction Losses
• Ultra Low Gate Charge (Qg)
• Avalanche Energy Rated (UIS)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and Telecom Power Supplies
• Switch Mode Power Supplies (SMPS)
• Power Factor Correction Power Supplies (PFC)
• Lighting
- High-Intensity Discharge (HID)
- Fluorescent Ballast Lighting
- LED Lighting
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
• Renewable Energy
- Solar (PV Inverters)
TO-220 FULLPAK
SiHF30N60E-GE3
SiHF30N60E-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
VDS
VGS
Continuous Drain Current (TJ = 150 °C)d
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dte
TJ = 125 °C
EAS
PD
TJ, Tstg
dV/dt
Soldering Recommendations (Peak Temperature)c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 7 A.
c. 1.6 mm from case.
d. Limited by maximum junction temperature.
e. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
600
± 20
30
29
18
65
0.29
690
37
- 55 to + 150
37
18
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S13-0059-Rev. F, 21-Jan-13
1
Document Number: 91454
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SIHF30N60E Datasheet

MOSFET

No Preview Available !

www.vishay.com
SiHF30N60E
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
3.4
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
VDS
VDS/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductancea
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Relateda
Effective Output Capacitance, Time
Relatedb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
RDS(on)
gfs
Ciss
Coss
Crss
Co(er)
Co(tr)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 250 μA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 600 V, VGS = 0 V
VDS = 600 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 15 A
VDS = 8 V, ID = 3 A
VGS = 0 V,
VDS = 100 V,
f = 1.0 MHz
VDS = 0 V to 480 V, VGS = 0 V
VGS = 10 V
ID = 15 A, VDS = 480 V
VDD = 380 V, ID = 15 A,
VGS = 10 V, Rg = 4.7
f = 1 MHz, open drain
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
D
Pulsed Diode Forward Current
integral reverse
G
ISM p - n junction diode
S
MIN.
600
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
0.64
-
-
-
-
0.104
5.4
-
-
4.0
± 100
1
100
0.125
-
V
V/°C
V
nA
μA
S
2600
138
3
98
-
-
-
-
346
85
15
39
19
32
63
36
0.63
-
130
-
-
40
65
95
75
-
pF
nC
ns
- 29
A
- 65
Diode Forward Voltage
VSD
TJ = 25 °C, IS = 15 A, VGS = 0 V
- - 1.3 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
trr
Qrr
IRRM
TJ = 25 °C, IF = IS = 15 A,
dI/dt = 100 A/μs, VR = 20 V
- 402 605 ns
- 7 15 μC
- 32 65 A
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
S13-0059-Rev. F, 21-Jan-13
2
Document Number: 91454
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SIHF30N60E
Description MOSFET
Maker Vishay
Total Page 8 Pages
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