SiHF35N60EF Description
SiHF35N60EF Vishay Siliconix EF Series Power MOSFET With Fast Body Diode TO-220 FULLPAK D G GDS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 134 16 48 Single 0.084.
SiHF35N60EF Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance please see .vishay./doc?99912