SIHG80N60E Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance
- Part: SIHG80N60E
- Manufacturer: Vishay (official site)
- Size: 147.11 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| SiHG026N65E | Power MOSFET |
| SiHG039N60E | Power MOSFET |
| SiHG050N60E | Power MOSFET |
| SiHG052N60EF | Power MOSFET |
| SiHG085N60EF | Power MOSFET |
SIHG80N60E Description
SiHG80N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 443 85 139 Single 0.026 TO-247AC D S D G G S N-Channel MOSFET.