SIR5208DP
SIR5208DP is N-Channel MOSFET manufactured by Vishay.
FEATURES
- Trench FET® Gen V power MOSFET
- 2.5 V rated RDS(on)
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Battery management
- Load switching
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
Power PAK SO-8 Si R5208DP-T1-RE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C TA = 25 °C TA = 70 °C
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
TC = 25 °C TA = 25 °C
Single pulse avalanche current Single pulse avalanche energy
L = 0.1 m H
TC = 25 °C
Maximum power dissipation
TC = 70 °C TA = 25 °C TA = 70 °C
Operating junction and storage temperature range
Soldering remendations (peak temperature) c
VDS VGS
IDM IS IAS EAS
TJ, Tstg
LIMIT 20
+8 / -7 165 132 48 b, c
38.4 b, c 150 51.6
4.3 b, c...
