SIR5402DP Description
SIR5402DP Vishay Siliconix N-Channel 40 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 Top View 5.15 mm PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ.
SIR5402DP Key Features
- TrenchFET® Gen IV standard level MOSFET
- High Vth design to avoid noise
- Optimal Qgd / Qgs ratio
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance