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SIR5802DP - N-Channel 80V MOSFET

Features

  • TrenchFET® Gen V power MOSFET.
  • Ultra-low RDS x Qg FOM product.
  • Optimized Qgd/Qgs ratio.
  • Excellent efficiency performance in power supplies.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SIR5802DP
Manufacturer Vishay
File Size 251.35 KB
Description N-Channel 80V MOSFET
Datasheet download datasheet SIR5802DP Datasheet

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Full PDF Text Transcription

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www.vishay.com SIR5802DP Vishay Siliconix N-Channel 80 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 Top View 5.15 mm PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 80 0.0029 0.0040 28 137.5 Single FEATURES • TrenchFET® Gen V power MOSFET • Ultra-low RDS x Qg FOM product • Optimized Qgd/Qgs ratio • Excellent efficiency performance in power supplies • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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