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SIS406DN Key Features

  • TrenchFET® power MOSFET
  • PWM optimized
  • New low thermal resistance PowerPAK®
  • 100 % Rg and UIS tested
  • Material categorization: for definitions of pliance

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SIS406DN Description

() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 30 0.0110 0.0145 8.4 14 Single.