SIS412DN Description
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 30 0.024 0.030 3.8 12 a Single.
SIS412DN Key Features
- TrenchFET® power MOSFET
- 100 % Rg tested
- Material categorization:
SIS412DN is N-Channel MOSFET manufactured by Vishay.
| Part Number | Description |
|---|---|
| SIS410DN | N-Channel MOSFET |
| SiS413DN | P-Channel 30V MOSFET |
| SIS414DN | N-Channel 30V MOSFET |
| SiS415DNT | P-Channel MOSFET |
| SIS402DN | N-Channel MOSFET |
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 30 0.024 0.030 3.8 12 a Single.