SIS412DN Overview
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 30 0.024 0.030 3.8 12 a Single.
SIS412DN Key Features
- TrenchFET® power MOSFET
- 100 % Rg tested
- Material categorization:
SIS412DN Datasheet Details
| Part number | SIS412DN |
|---|---|
| Datasheet | SIS412DN_Vishay.pdf |
| File Size | 592.71 KB |
| Manufacturer | Vishay |
| Description | N-Channel MOSFET |
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