SiS413DN Description
P-Channel 30 V (D-S) MOSFET SiS413DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.0094 at VGS = - 10 V - 30 0.0132 at VGS = - 4.5 V ID (A) - 18d - 18d Qg (Typ.) 35.4.
SiS413DN Key Features
- TrenchFET® Power MOSFET
- 100% Rg and UIS Tested
- Material categorization