SiS415DNT Description
() at VGS = -10 V RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V Qg typ.
SiS415DNT Key Features
- TrenchFET® Gen III P-channel power MOSFET
- Thin 0.8 mm maximum height
- 100 % Rg and UIS tested
- Material categorization: