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SIUD403ED Key Features

  • TrenchFET® Gen III p-channel power MOSFET
  • Ultra small 0.8 mm x 0.6 mm outline
  • Ultra thin 0.4 mm max. height
  • Typical ESD protection 1500 V (HBM)
  • 1.5 V rated RDS(ON)
  • 100% Rg tested
  • Material categorization: for definitions of pliance

Related Vishay Datasheets

Part Number Description
SiUD402ED N-Channel MOSFET
SIUD412ED N-Channel MOSFET

SIUD403ED Description

SiUD403ED Vishay Siliconix P-Channel 20 V (D-S) MOSFET PowerPAK® 0806 Single D 3 0.4 mm 0.8 mm 1 0.6 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max.