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SiUD402ED - N-Channel MOSFET

Features

  • TrenchFET® power MOSFET.
  • Ultra small 0.8 mm x 0.6 mm outline.
  • Ultra thin 0.4 mm max. height.
  • 100 % Rg tested.
  • Typical ESD protection 2000 V (HBM).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiUD402ED
Manufacturer Vishay
File Size 218.44 KB
Description N-Channel MOSFET
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www.vishay.com SiUD402ED Vishay Siliconix N-Channel 20 V (D-S) MOSFET PowerPAK® 0806 Single D 3 0.4 mm 0.8 mm 1 0.6 mm Top View Marking Code: C PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V RDS(on) max. () at VGS = 1.8 V RDS(on) max. () at VGS = 1.5 V Qg typ. (nC) ID (A) a Configuration 1 2 G S Bottom View 20 0.73 0.87 1.10 1.80 0.5 1 Single FEATURES • TrenchFET® power MOSFET • Ultra small 0.8 mm x 0.6 mm outline • Ultra thin 0.4 mm max. height • 100 % Rg tested • Typical ESD protection 2000 V (HBM) • Material categorization: for definitions of compliance please see www.vishay.
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