SIUD403ED Overview
Key Features
- TrenchFET® Gen III p-channel power MOSFET
- Ultra small 0.8 mm x 0.6 mm outline
- Ultra thin 0.4 mm max. height
- Typical ESD protection 1500 V (HBM)
- 1.5 V rated RDS(ON)
- 100% Rg tested
- Material categorization: for definitions of compliance please see
