SQM120N06-06
FEATURES
- Trench FET® power MOSFET
- Package with low thermal resistance
- AEC-Q101 qualified d
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy
TC = 25 °C a TC = 125 °C
L = 0.1 m H
VDS VGS
IS IDM IAS EAS
Maximum Power Dissipation b
TC = 25 °C TC = 125 °C
Operating Junction and Storage Temperature Range
PD TJ, Tstg
LIMIT 60 ± 20 120 80 120 480 65 211 230 76
-55 to...
