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SUD40N10-25
Vishay Siliconix
N-Channel 100-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) 100 RDS(on) (Ω) 0.025 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A) 40 38
FEATURES
• TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested
Available
RoHS*
COMPLIANT
TO-252
D
Drain Connected to Tab G D S
G
Top View Ordering Information: SUD40N10-25 SUD40N10-25-E3 (Lead (Pb)-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy (Duty Cycle ≤ 1 %) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.
SUD40N10-25 Datasheet
