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SUD50P10-43 Datasheet

P-Channel MOSFET

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SUD50P10-43
Vishay Siliconix
P-Channel 100-V (D-S) 175 _C MOSFET
PRODUCT SUMMARY
VDS (V)
–100
rDS(on) (W)
0.043 at VGS = –10 V
ID (A)a
–38
Qg (Typ)
105 nC
FEATURES
D TrenchFETr Power MOSFET
RoHS
COMPLIANT
TO-252
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50P10-43–E3 (Lead (Pb)-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175 _C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 _C
TC = 70 _C
TA = 25 _C
TA = 70 _C
TC = 25 _C
TA = 25 _C
L = 0.1 mH
TC = 25 _C
TC = 70 _C
TA = 25 _C
TA = 70 _C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
–100
"20
–38a
–31.8a
–9.4b, c
–7.8b, c
–50
–50a
–6.9b, c
–40
80
136
95
8.3b, c
5.8b, c
–50 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1” x 1” FR4 Board.
c. t = 10 sec.
d. Maximum under steady state conditions is 40 _C/W.
Document Number: 73445
S–60311—Rev. B, 27-Feb-06
t p 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
15
0.85
Maximum
18
1.1
Unit
V
A
mJ
W
_C
Unit
_C/W
www.vishay.com
1
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Vishay Intertechnology Electronic Components Datasheet

SUD50P10-43 Datasheet

P-Channel MOSFET

No Preview Available !

SUD50P10-43
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
DVDS/TJ
DVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = –250 mA
ID = –250 mA
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = –100 V, VGS = 0 V
VDS = –100 V, VGS = 0 V, TJ = 55 _C
VDS w 5 V, VGS = –10 V
VGS = –10 V, ID = –9.4 A
VDS = –15 V, ID = –9.4 A
–100
–2
–35
–105
7
–3
0.036
30
V
mV/_C
–4
"100
–1
–10
0.043
V
nA
mA
A
W
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
VDS = –50 V, VGS = 0 V, f = 1 MHz
VDS = –50 V, VGS = –10 V, ID = –9.4 A
f = 1 MHz
VDD = –50 V, RL = 6.4 W
ID ^ –7.8 A, VGEN = –10 V, Rg = 1 W
5230
230
165
105
21
29
4.1
30
115
80
60
160
50
175
120
90
pF
nC
W
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
IS TC = 25 _C
ISM
VSD IS = –7.8 A
trr
Qrr IF = –7.8 A, di/dt = 100 A/ms, TJ = 25 _C
ta
tb
–0.8
60
180
48
12
–50
–50
–1.2
90
270
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73445
S–60311—Rev. B, 27-Feb-06
http://www.Datasheet4U.com


Part Number SUD50P10-43
Description P-Channel MOSFET
Maker Vishay
Total Page 7 Pages
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