Datasheet Details
| Part number | SUD50P10-43L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.95 KB |
| Description | P-Channel MOSFET |
| Datasheet | SUD50P10-43L-INCHANGE.pdf |
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Overview: Isc P-Channel MOSFET Transistor ·.
| Part number | SUD50P10-43L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.95 KB |
| Description | P-Channel MOSFET |
| Datasheet | SUD50P10-43L-INCHANGE.pdf |
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·Power Supply - Secondary Synchronous Rectification ·Power tools ·Motor drive switch ·Battery management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGSS ID IDM PD Tch Gate-Source Voltage Drain Current-Continuous@TC=25℃ （ TJ=150℃） TC=125℃ TA=25℃ TA=125℃ Drain Current-Single Pulsed(t=100μs) Total Dissipation @TC=25℃ TC=70℃ TA=25℃ TA=70℃ Max.
Operating Junction Temperature ±20 -37.1 -31 -9.2 -7.7 -40 136 95 8.3 5.8 -55~175 Tstg Storage Temperature -55~175 INCHANGE Semiconductor SUD50P10-43L UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance t≤10sec Steady State MAX 1.1 UNIT ℃/W 18 ℃/W 50 isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark Isc P-Channel MOSFET Transistor INCHANGE Semiconductor SUD50P10-43L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID=- 0.25mA -100 V VGS(th) Gate Threshold Voltage VDS= ±20V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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SUD50P10-43L | P-Channel MOSFET | Vishay |
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