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SUD50P10-43L - P-Channel MOSFET

General Description

Power Supply - Secondary Synchronous Rectification Power tools Motor drive switch Battery management ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGSS ID IDM PD Tch Gate-Source Voltage Drain Current-Continuous@TC=25℃ （ TJ=

Key Features

  • TrenchFET® Power MOSFET.
  • 175 °C Junction Temperature.
  • 100 % Rg and UIS Tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Isc P-Channel MOSFET Transistor ·FEATURES ·TrenchFET® Power MOSFET ·175 °C Junction Temperature ·100 % Rg and UIS Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Power Supply - Secondary Synchronous Rectification ·Power tools ·Motor drive switch ·Battery management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGSS ID IDM PD Tch Gate-Source Voltage Drain Current-Continuous@TC=25℃ （ TJ=150℃） TC=125℃ TA=25℃ TA=125℃ Drain Current-Single Pulsed(t=100μs) Total Dissipation @TC=25℃ TC=70℃ TA=25℃ TA=70℃ Max. Operating Junction Temperature ±20 -37.1 -31 -9.2 -7.7 -40 136 95 8.3 5.